Complementary logic operation based on electric-field controlled spin-orbit torques
- Authors
- Baek, Seung-heon Chris; Park, Kyung-Woong; Kil, Deok-Sin; Jang, Yunho; Park, Jongsun; Lee, Kyung-Jin; Park, Byong-Guk
- Issue Date
- Jul-2018
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NATURE ELECTRONICS, v.1, no.7, pp.398 - 403
- Indexed
- SCOPUS
- Journal Title
- NATURE ELECTRONICS
- Volume
- 1
- Number
- 7
- Start Page
- 398
- End Page
- 403
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/74858
- DOI
- 10.1038/s41928-018-0099-8
- ISSN
- 2520-1131
- Abstract
- Spintronic devices offer low power consumption, built-in memory, high scalability and reconfigurability, and could therefore provide an alternative to traditional semiconductor-based electronic devices. However, for spintronic devices to be useful in computing, complementary logic operation using spintronic logic gates is likely to be required. Here we report a complementary spin logic device using electric-field controlled spin-orbit torque switching in a heavy metal/ferromagnet/oxide structure. We show that the critical current for spin-orbit-torque-induced switching of perpendicular magnetization can be efficiently modulated by an electric field via the voltage-controlled magnetic anisotropy effect. Moreover, the polarity of the voltage-controlled magnetic anisotropy can be tuned through modification of the oxidation state at the ferromagnet/oxide interface. This allows us to create both n-type and p-type spin logic devices and demonstrate complementary logic operation.
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- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
- College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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