On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication
DC Field | Value | Language |
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dc.contributor.author | Jang, Ho-Kyun | - |
dc.contributor.author | Choi, Jun Hee | - |
dc.contributor.author | Kim, Do-Hyun | - |
dc.contributor.author | Kim, Gyu Tae | - |
dc.date.accessioned | 2021-09-02T09:56:36Z | - |
dc.date.available | 2021-09-02T09:56:36Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-06-30 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/74880 | - |
dc.description.abstract | Single-walled carbon nanotube (SWCNT) is generally used as a networked structure in the fabrication of a field-effect transistor (FET) since it is known that one-third of SWCNT is electrically metallic and the remains are semiconducting. In this case, the presence of metallic paths by metallic SWCNT (m-SWCNT) becomes a significant technical barrier which hinders the networks from achieving a semiconducting behavior, resulting in a low on/off ratio. Here, we report on an easy method of controlling the on/off ratio of a FET where semiconducting SWCNT (s-SWCNT) and m-SWCNT constitute networks between source and drain electrodes. A FET with SWCNT networks was simply sonicated under water to control the on/off ratio and network density. As a result, the FET having an almost metallic behavior due to the metallic paths by m-SWCNT exhibited a p-type semiconducting behavior. The on/off ratio ranged from 1 to 9.0 x 10(4) along sonication time. In addition, theoretical calculations based on Monte-Carlo method and circuit simulation were performed to understand and explain the phenomenon of a change in the on/off ratio and network density by sonication. On the basis of experimental and theoretical results, we found that metallic paths contributed to a high off-state current which leads to a low on/off ratio and that sonication formed sparse SWCNT networks where metallic paths of m-SWCNT were removed, resulting in a high on/off ratio. This method can open a chance to save the device which has been considered as a failed one due to a metallic behavior by a high network density leading to a low on/off ratio. (C) 2018 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TRANSPARENT CONDUCTING FILMS | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | TUBULES | - |
dc.subject | MICROTUBULES | - |
dc.title | On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Do-Hyun | - |
dc.contributor.affiliatedAuthor | Kim, Gyu Tae | - |
dc.identifier.doi | 10.1016/j.apsusc.2018.03.050 | - |
dc.identifier.scopusid | 2-s2.0-85043980646 | - |
dc.identifier.wosid | 000429343200053 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.444, pp.442 - 447 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 444 | - |
dc.citation.startPage | 442 | - |
dc.citation.endPage | 447 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TRANSPARENT CONDUCTING FILMS | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | TUBULES | - |
dc.subject.keywordPlus | MICROTUBULES | - |
dc.subject.keywordAuthor | Single-walled carbon nanotube | - |
dc.subject.keywordAuthor | Field-effect transistor | - |
dc.subject.keywordAuthor | Network | - |
dc.subject.keywordAuthor | Monte-Carlo method | - |
dc.subject.keywordAuthor | On/off ratio | - |
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