Soft-type trap-induced degradation of MoS2 field effect transistors
DC Field | Value | Language |
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dc.contributor.author | Cho, Young-Hoon | - |
dc.contributor.author | Ryu, Min-Yeul | - |
dc.contributor.author | Lee, Kook Jin | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Choi, Jun Hee | - |
dc.contributor.author | Lee, Byung-Chul | - |
dc.contributor.author | Kim, Wungyeon | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2021-09-02T10:30:52Z | - |
dc.date.available | 2021-09-02T10:30:52Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-06-01 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/74981 | - |
dc.description.abstract | The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | LOW-FREQUENCY NOISE | - |
dc.subject | MOBILITY | - |
dc.title | Soft-type trap-induced degradation of MoS2 field effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1088/1361-6528/aab4d3 | - |
dc.identifier.scopusid | 2-s2.0-85045563517 | - |
dc.identifier.wosid | 000429219200001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.29, no.22 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 29 | - |
dc.citation.number | 22 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | low frequency noise | - |
dc.subject.keywordAuthor | degradation | - |
dc.subject.keywordAuthor | CNF-CMF model | - |
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