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Soft-type trap-induced degradation of MoS2 field effect transistors

Authors
Cho, Young-HoonRyu, Min-YeulLee, Kook JinPark, So JeongChoi, Jun HeeLee, Byung-ChulKim, WungyeonKim, Gyu-Tae
Issue Date
1-6월-2018
Publisher
IOP PUBLISHING LTD
Keywords
MoS2; low frequency noise; degradation; CNF-CMF model
Citation
NANOTECHNOLOGY, v.29, no.22
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
29
Number
22
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/74981
DOI
10.1088/1361-6528/aab4d3
ISSN
0957-4484
Abstract
The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.
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