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Two-dimensional GeAs with a visible range band gap

Authors
Jung, Chan SuKim, DoyeonCha, SeunghwanMyung, YoonShojaei, FazelAbbas, Hafiz GhulamLee, Jung AhCha, Eun HeePark, JeungheeKang, Hong Seok
Issue Date
21-5월-2018
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY A, v.6, no.19, pp.9089 - 9098
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY A
Volume
6
Number
19
Start Page
9089
End Page
9098
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/75508
DOI
10.1039/c8ta02676a
ISSN
2050-7488
Abstract
Two-dimensional (2D) layered structures have recently drawn worldwide attention because of their intriguing optical and electrical properties. In this study, we prepared GeAs nanosheets as a new 2D material by a liquid-phase exfoliation method. The few-layered nanosheets had a band gap close to 2.1 eV, which is significantly higher (by about 1.5 eV) compared to the bulk. The value of 2.1 eV is in excellent agreement with that for the monolayer obtained from first-principles (HSE-06) calculations; mono-, bi-, tri-, and tetra-layers have remarkable direct or quasi-direct band gaps of 2.125, 1.339, 1.112, and 1.017 eV, respectively. The electrical properties of individual GeAs nanosheets were measured to reveal their 2D carrier transport behaviors. We also observed stable and large photocurrents, indicating potential application in high-performance optoelectronic nanodevices. The few-layered GeAs nanosheets deposited on n-type Si nanowire arrays showed promising photoelectrochemical water splitting under visible light irradiation. Band alignment based on the calculated band edge positions suggested a buildup of the space charge region in the p-GeAs/n-Si heterojunction, as well as the band bending of n-Si at the electrolyte interface.
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