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Silicon nanowire ratioed inverters on bendable substrates
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Moon, Jeongje | - |
| dc.contributor.author | Kim, Yoonjoong | - |
| dc.contributor.author | Lim, Doohyeok | - |
| dc.contributor.author | Im, Kyeungmin | - |
| dc.contributor.author | Kim, Sangsig | - |
| dc.date.accessioned | 2021-09-02T12:31:10Z | - |
| dc.date.available | 2021-09-02T12:31:10Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2018-05 | - |
| dc.identifier.issn | 1998-0124 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76056 | - |
| dc.description.abstract | In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | TSINGHUA UNIV PRESS | - |
| dc.subject | LIMITS | - |
| dc.subject | GATE | - |
| dc.title | Silicon nanowire ratioed inverters on bendable substrates | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
| dc.identifier.doi | 10.1007/s12274-017-1884-9 | - |
| dc.identifier.scopusid | 2-s2.0-85033372711 | - |
| dc.identifier.wosid | 000431999700024 | - |
| dc.identifier.bibliographicCitation | NANO RESEARCH, v.11, no.5, pp.2586 - 2591 | - |
| dc.relation.isPartOf | NANO RESEARCH | - |
| dc.citation.title | NANO RESEARCH | - |
| dc.citation.volume | 11 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 2586 | - |
| dc.citation.endPage | 2591 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | LIMITS | - |
| dc.subject.keywordPlus | GATE | - |
| dc.subject.keywordAuthor | silicon nanowire | - |
| dc.subject.keywordAuthor | ratioed inverter | - |
| dc.subject.keywordAuthor | n-metal oxide semiconductor (MOS) inverter | - |
| dc.subject.keywordAuthor | p-MOS inverter | - |
| dc.subject.keywordAuthor | bendable substrate | - |
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