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Silicon nanowire ratioed inverters on bendable substrates

Authors
Moon, JeongjeKim, YoonjoongLim, DoohyeokIm, KyeungminKim, Sangsig
Issue Date
5월-2018
Publisher
TSINGHUA UNIV PRESS
Keywords
silicon nanowire; ratioed inverter; n-metal oxide semiconductor (MOS) inverter; p-MOS inverter; bendable substrate
Citation
NANO RESEARCH, v.11, no.5, pp.2586 - 2591
Indexed
SCIE
SCOPUS
Journal Title
NANO RESEARCH
Volume
11
Number
5
Start Page
2586
End Page
2591
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/76056
DOI
10.1007/s12274-017-1884-9
ISSN
1998-0124
Abstract
In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.
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