Solution-processed flexible NiO resistive random access memory device
- Authors
- Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon
- Issue Date
- 4월-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.142, pp.56 - 61
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 142
- Start Page
- 56
- End Page
- 61
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/76197
- DOI
- 10.1016/j.sse.2018.02.006
- ISSN
- 0038-1101
- Abstract
- Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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