In situ annealing of III1-xMnxV ferromagnetic semiconductors
DC Field | Value | Language |
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dc.contributor.author | Liu, Xinyu | - |
dc.contributor.author | Bac, Seul-Ki | - |
dc.contributor.author | Sapkota, Pitambar | - |
dc.contributor.author | Gorsak, Cameron | - |
dc.contributor.author | Li, Xiang | - |
dc.contributor.author | Dong, Sining | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Ptasinska, Sylwia | - |
dc.contributor.author | Furdyna, Jacek K. | - |
dc.contributor.author | Dobrowolska, Margaret | - |
dc.date.accessioned | 2021-09-02T14:00:54Z | - |
dc.date.available | 2021-09-02T14:00:54Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76830 | - |
dc.description.abstract | A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing. Published by the AVS. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | MAGNETIC SEMICONDUCTORS | - |
dc.subject | CURIE-TEMPERATURE | - |
dc.subject | GA1-XMNXAS | - |
dc.subject | TRANSPORT | - |
dc.title | In situ annealing of III1-xMnxV ferromagnetic semiconductors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1116/1.5014983 | - |
dc.identifier.scopusid | 2-s2.0-85041438285 | - |
dc.identifier.wosid | 000428280500012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.2 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 36 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | CURIE-TEMPERATURE | - |
dc.subject.keywordPlus | GA1-XMNXAS | - |
dc.subject.keywordPlus | TRANSPORT | - |
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