In situ annealing of III1-xMnxV ferromagnetic semiconductors
- Authors
- Liu, Xinyu; Bac, Seul-Ki; Sapkota, Pitambar; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sanghoon; Ptasinska, Sylwia; Furdyna, Jacek K.; Dobrowolska, Margaret
- Issue Date
- 3월-2018
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 36
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/76830
- DOI
- 10.1116/1.5014983
- ISSN
- 1071-1023
- Abstract
- A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing. Published by the AVS.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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