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Quantum Dots Formed in Three-dimensional Dirac Semimetal Cd3As2 Nanowires

Authors
Jung, MinkyungYoshida, KenjiPark, KidongZhang, Xiao-XiaoYesilyurt, CanSiu, Zhuo BinJalil, Mansoor B. A.Park, JinwanPark, JeungheeNagaosa, NaotoSeo, JungpilHirakawa, Kazuhiko
Issue Date
3월-2018
Publisher
AMER CHEMICAL SOC
Keywords
Dirac semimetal; Cd3As2; Klein tunneling nanowire; quantum dot; ballistic transport
Citation
NANO LETTERS, v.18, no.3, pp.1863 - 1868
Indexed
SCIE
SCOPUS
Journal Title
NANO LETTERS
Volume
18
Number
3
Start Page
1863
End Page
1868
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/77287
DOI
10.1021/acs.nanolett.7b05165
ISSN
1530-6984
Abstract
We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd3As2 nanowires using two electrostatically tuned p-n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd3As2 nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p-type QD can be formed between two n-type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p-n junctions formed between the p-type QD and two neighboring n-type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p-type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals.
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