Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
DC Field | Value | Language |
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dc.contributor.author | Lee, Sojeong | - |
dc.contributor.author | Lee, Won-Yong | - |
dc.contributor.author | Jang, Bongho | - |
dc.contributor.author | Kim, Taegyun | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.contributor.author | Jang, Jaewon | - |
dc.date.accessioned | 2021-09-02T17:08:25Z | - |
dc.date.available | 2021-09-02T17:08:25Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/78491 | - |
dc.description.abstract | Solution-p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of 1.38 x 10(11) (cm Hz(1/2) W-1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | PERFORMANCE | - |
dc.title | Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kyoungah | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1109/LED.2017.2779816 | - |
dc.identifier.scopusid | 2-s2.0-85037612479 | - |
dc.identifier.wosid | 000418874200012 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.47 - 50 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 39 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 47 | - |
dc.citation.endPage | 50 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | CuO | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | photocurrent | - |
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