Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
- Authors
- Lee, Sojeong; Lee, Won-Yong; Jang, Bongho; Kim, Taegyun; Bae, Jin-Hyuk; Cho, Kyoungah; Kim, Sangsig; Jang, Jaewon
- Issue Date
- 1월-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Sol-gel; CuO; thin film transistors; photocurrent
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.47 - 50
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 39
- Number
- 1
- Start Page
- 47
- End Page
- 50
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/78491
- DOI
- 10.1109/LED.2017.2779816
- ISSN
- 0741-3106
- Abstract
- Solution-p-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of 1.38 x 10(11) (cm Hz(1/2) W-1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimensional material systems and comparable to that of devices based on a one-dimensional nanowire system. Our results indicate that the sol-gel-processed, CuO-based photodetector system is a promising candidate for applications, such as near-infrared imaging devices, sensors, solar cells, and p-type inks for future printed electronics.
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