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Ge 나노입자와 HfO2 게이트 물질을 이용한 MOS 캐패시터의 전기적 특성에 관한 연구
- Authors
- Kim, Sangsig
- Publisher
- 한국전기전자재료학회
- Citation
- 한국전기전자재료학회 2008년도 춘계학술대회
- Conference Name
- 한국전기전자재료학회 2008년도 춘계학술대회
- Place
- KO
서울
- Conference Date
- 2008-04-11
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- Appears in
Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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