Highly Efficient Deep-UV Light-Emitting Diodes Using AIN-Based Deep-UV-Transparent Glass Electrodes
- Authors
- Lee, Tae Ho; Lee, Byeong Ryong; Son, Kyung Rock; Shin, Hee Woong; Kim, Tae Geun
- Issue Date
- 20-12월-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- deep-UV light-emitting diode; direct Ohmic contact; glass electrode; pulsed electrical breakdown; transparent conductive electrode
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.50, pp.43774 - 43781
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 50
- Start Page
- 43774
- End Page
- 43781
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/81146
- DOI
- 10.1021/acsami.7b13624
- ISSN
- 1944-8244
- Abstract
- Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because.these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a P-Al0.4Ga0.6N layer (rho(c) = 3.2 X 10(-2) Omega.cm(2)). The Ohmic conduction mechanism at the interface between the AIN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AIN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.
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