Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers
- Authors
- Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun
- Issue Date
- 13-12월-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- self-rectifying; resistive switching; selectivity; Schottky emission; crossbar array
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.49, pp.43336 - 43342
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 49
- Start Page
- 43336
- End Page
- 43342
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/81189
- DOI
- 10.1021/acsami.7b10266
- ISSN
- 1944-8244
- Abstract
- Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/Ga-x stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (-2.8 to 2.5 V), high on/off ratios (similar to 20), high selectivity (similar to 10(4)), high operating speeds (200-500 ns), a very low forming voltage (similar to 3 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.