Impact ionization and tunneling operations in charge-plasma dopingless device

Abstract

In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively-as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)-according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I-V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10(-14) A/mu m and a high I-ON/I-OFF of approximately 10(8), under the n-TFET operation mode. (C) 2017 Elsevier Ltd. All rights reserved.