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Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

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dc.contributor.authorSeo, Yujin-
dc.contributor.authorLee, Tae In-
dc.contributor.authorAhn, Hyun Jun-
dc.contributor.authorMoon, Jungmin-
dc.contributor.authorHwang, Wan Sik-
dc.contributor.authorYu, Hyun-Yong-
dc.contributor.authorCho, Byung Jin-
dc.date.accessioned2021-09-03T00:58:19Z-
dc.date.available2021-09-03T00:58:19Z-
dc.date.created2021-06-19-
dc.date.issued2017-10-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/82137-
dc.description.abstractA new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectOVERLAYER THICKNESS-
dc.subjectCONTACT RESISTIVITY-
dc.subjectDIFFUSION-
dc.subjectOXYGEN-
dc.subjectREDUCTION-
dc.subjectTITANIUM-
dc.subjectLAYER-
dc.subjectXPS-
dc.titleFermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2-
dc.typeArticle-
dc.contributor.affiliatedAuthorYu, Hyun-Yong-
dc.identifier.doi10.1109/TED.2017.2736163-
dc.identifier.scopusid2-s2.0-85028457224-
dc.identifier.wosid000413728700039-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245-
dc.relation.isPartOfIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume64-
dc.citation.number10-
dc.citation.startPage4242-
dc.citation.endPage4245-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusOVERLAYER THICKNESS-
dc.subject.keywordPlusCONTACT RESISTIVITY-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusOXYGEN-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusTITANIUM-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusXPS-
dc.subject.keywordAuthorFermi-level pinning (FLP)-
dc.subject.keywordAuthorgermanium-
dc.subject.keywordAuthorSchottky barrier height (SBH)-
dc.subject.keywordAuthortitanium oxide-
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