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Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Authors
Seo, YujinLee, Tae InAhn, Hyun JunMoon, JungminHwang, Wan SikYu, Hyun-YongCho, Byung Jin
Issue Date
10월-2017
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Fermi-level pinning (FLP); germanium; Schottky barrier height (SBH); titanium oxide
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
64
Number
10
Start Page
4242
End Page
4245
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/82137
DOI
10.1109/TED.2017.2736163
ISSN
0018-9383
Abstract
A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.
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