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Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

Authors
Kim, Kyoung-WhanLee, Kyung-JinSinova, JairoLee, Hyun-WooStiles, M. D.
Issue Date
26-Sep-2017
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.96, no.10
Indexed
SCIE
SCOPUS
Journal Title
PHYSICAL REVIEW B
Volume
96
Number
10
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/82194
DOI
10.1103/PhysRevB.96.104438
ISSN
2469-9950
Abstract
We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.
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