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Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector
- Issue Date
- 9월-2017
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- AlGaN; GaN; III/V ratio; Composition; DBR
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.71, no.6, pp.345 - 348
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 71
- Number
- 6
- Start Page
- 345
- End Page
- 348
- ISSN
- 0374-4884
- Abstract
- In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% similar to 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.
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