A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes
- Authors
- Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon
- Issue Date
- Aug-2017
- Publisher
- SPRINGER
- Keywords
- Ohmic contact; NiZn solid solution; light-emitting diode; AlGaInP; x-ray photoemission spectroscopy
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.46, no.8, pp.4750 - 4754
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 46
- Number
- 8
- Start Page
- 4750
- End Page
- 4754
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/82625
- DOI
- 10.1007/s11664-017-5406-z
- ISSN
- 0361-5235
- Abstract
- We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500A degrees C, with a contact resistivity of 5.2 x 10(-6) Omega cm(2). LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500A degrees C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.
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