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Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique
- Authors
- Woo, Hyeonseok; Jo, Hansol; Kim, Jongmin; Cho, Sangeun; Jo, Yongcheol; Roh, Cheong Hyun; Lee, Jun Ho; Seo, Yonggon; Park, Jungho; Kim, Hyungsang; Hahn, Cheol-Koo; Im, Hyunsik
- Issue Date
- 8월-2017
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- InGaN; MBE; Metal modulation epitaxy; Phase separation
- Citation
- CURRENT APPLIED PHYSICS, v.17, no.8, pp.1142 - 1147
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 17
- Number
- 8
- Start Page
- 1142
- End Page
- 1147
- ISSN
- 1567-1739
- Abstract
- A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms. (C) 2017 Elsevier B.V. All rights reserved.
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