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Effects of Plasma Enhanced Chemical Vapor Deposition Radio Frequency on the Properties of SiNx:H Films
- Authors
- Lee, Kyung Dong; Ji, Kwang-Sun; Bae, Soohyun; Kim, Seongtak; Kim, Hyunho; Kim, Jae Eun; Nam, Yoon Chung; Choi, Sungjin; Jeong, Myeong Sang; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
- Issue Date
- 7월-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon Nitride; Plasma-Enhanced Chemical Vapor Deposition Frequency; Passivation; Silicon Solar Cell; Surface Damage
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.7, pp.4687 - 4693
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 7
- Start Page
- 4687
- End Page
- 4693
- ISSN
- 1533-4880
- Abstract
- Hydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.
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