Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film
DC Field | Value | Language |
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dc.contributor.author | Ahn, Hyun Jun | - |
dc.contributor.author | Moon, Jungmin | - |
dc.contributor.author | Seo, Yujin | - |
dc.contributor.author | Lee, Tae In | - |
dc.contributor.author | Kim, Choong-Ki | - |
dc.contributor.author | Hwang, Wan Sik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.date.accessioned | 2021-09-03T05:44:26Z | - |
dc.date.available | 2021-09-03T05:44:26Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83349 | - |
dc.description.abstract | Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 mu Omega.cm) at 15 nm was obtained by N-2 + H-2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (rho(c)) values of 9.01 mu Omega.cm(2) for an NiGe/n(+)Ge contact and 3.61 mu Omega.cm(2) for an NiGe/p(+) Ge contact. These values were comparable to those obtained using sputteredNi. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 degrees C. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | STABILITY | - |
dc.title | Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/TED.2017.2694456 | - |
dc.identifier.scopusid | 2-s2.0-85018956901 | - |
dc.identifier.wosid | 000402057100019 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 64 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2599 | - |
dc.citation.endPage | 2603 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | Atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | nickel germanide (NiGe) | - |
dc.subject.keywordAuthor | sheet resistance | - |
dc.subject.keywordAuthor | specific contact resistivity | - |
dc.subject.keywordAuthor | transfer length method (TLM) | - |
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