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Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Authors
Ahn, Hyun JunMoon, JungminSeo, YujinLee, Tae InKim, Choong-KiHwang, Wan SikYu, Hyun-YongCho, Byung Jin
Issue Date
6월-2017
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Atomic layer deposition (ALD); nickel germanide (NiGe); sheet resistance; specific contact resistivity; transfer length method (TLM)
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
64
Number
6
Start Page
2599
End Page
2603
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/83349
DOI
10.1109/TED.2017.2694456
ISSN
0018-9383
Abstract
Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (34 mu Omega.cm) at 15 nm was obtained by N-2 + H-2 plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (rho(c)) values of 9.01 mu Omega.cm(2) for an NiGe/n(+)Ge contact and 3.61 mu Omega.cm(2) for an NiGe/p(+) Ge contact. These values were comparable to those obtained using sputteredNi. In addition, the ALD process-based NiGe showed excellent thermal/electrical stability up to 600 degrees C.
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공과대학 (전기전자공학부)
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