Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method
- Authors
- Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun
- Issue Date
- 28-4월-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- amorphous; nanocrystalline; oxide semiconductor; thin film transistor; charge trapping; fast transient charging; mobility
- Citation
- NANOTECHNOLOGY, v.28, no.17
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 28
- Number
- 17
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/83716
- DOI
- 10.1088/1361-6528/aa651c
- ISSN
- 0957-4484
- Abstract
- Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I-D-V-G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I-D-V-G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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