Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V
- Authors
- Ko, Eunah; Lee, Jae Woo; Shin, Changhwan
- Issue Date
- 4월-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Steep switching; negative capacitance FinFET; ferroelectric capacitor; S/D extension length (L-ext)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.38, no.4, pp.418 - 421
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 38
- Number
- 4
- Start Page
- 418
- End Page
- 421
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/83926
- DOI
- 10.1109/LED.2017.2672967
- ISSN
- 0741-3106
- Abstract
- In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a hysteresis window of 0.48 V, an on-/off-current ratio of 10(7), and a sub20- mV/decade average subthreshold slope (SSavg) that is intended to overcome the Boltzmann limit (i. e., the physical limit in the SS, which is 60 mV/decade at 300 K), is experimentally demonstrated vs. a baseline FinFET with an SSavg of similar to 105 mV/decade. In our testing, we confirmed that the large hysteresis window in a short-channel NC-FinFET can be suppressed by using an appropriate source/drain extension length (L-ext). As Lext in the NC-FinFET is increased, the gate-to-source/drain capacitance (C-GS/C-GD) decreased and the hysteresis window narrows.
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Collections - Graduate School > Department of Electronics and Information Engineering > 1. Journal Articles
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