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260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology
- Authors
- Yoon, D.; Seo, M. -G.; Song, K.; Kaynak, M.; Tillack, B.; Rieh, J. -S.
- Issue Date
- 2-Feb-2017
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- differential amplifiers; Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; terahertz wave devices; submillimetre wave amplifiers; differential amplifier; silicon germanium HBT technology; three-stage differential cascade topology; passive shunt transistor pair; parasitic base inductance; transistor pair amplification; amplifier instability; base bias voltage tuning; shunt transistor pair; amplifier peak gain; DC power dissipation; frequency 260 GHz; gain 15 dB; power 112 mW; SiGe
- Citation
- ELECTRONICS LETTERS, v.53, no.3, pp.194 - U72
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 53
- Number
- 3
- Start Page
- 194
- End Page
- U72
- ISSN
- 0013-5194
- Abstract
- A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 x 160 m(2) excluding Baluns and probing pads.
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Related Researcher
- Rieh, Jae Sung
- College of Engineering (School of Electrical Engineering)