Electrical Characteristics of SnO2 Thin-Film Transistors Fabricated on Bendable Substrates Using Reactive Magnetron Sputtering

Abstract

Electrical characteristics of top-gate SnO2 thin-film transistors (TFTs) fabricated on bendable substrates using direct current reactive magnetron sputtering were examined in this study. A TFT with an n-type SnO2 channel film deposited with an oxygen partial pressure of 27% exhibits the best electrical performance. It had a field-effect mobility of 4.43 cm(2)/V . s and an on/off-current ratio of 4.19 x 10(6). This electrical performance is comparable and superior to n-type SnO2 TFTs previously reported by other research groups. The electrical characteristics of our SnO2 TFTs under tensile or compressive strain, and the recovery characteristics after bending stresses, will be discussed in this paper. This paper is the first report about the full functionality of n-type SnO2 TFTs on flexible substrates under bending stresses, to the best of our knowledge.