Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics
- Authors
- Park, Hyeon Jung; Kim, Min Su; Kim, Jeongyong; Joo, Jinsoo
- Issue Date
- 10월-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- MoS2; Transistor; Mobility; Photo-responsive; Nanoscale; Photoluminescence
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.10, pp.1320 - 1325
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 10
- Start Page
- 1320
- End Page
- 1325
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/87350
- DOI
- 10.1016/j.cap.2016.07.006
- ISSN
- 1567-1739
- Abstract
- The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (IeV) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor. (C) 2016 Elsevier B.V. All rights reserved.
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