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Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films

Authors
Kim, Jae-HoKim, Dae-HyunKim, Sun-KyungBae, DukkyuYoo, Young-ZoSeong, Tae-Yeon
Issue Date
Sep-2016
Publisher
ELSEVIER SCI LTD
Keywords
TiO2; Refractive index; Ag; Transparent conducting electrode
Citation
CERAMICS INTERNATIONAL, v.42, no.12, pp.14071 - 14076
Indexed
SCIE
SCOPUS
Journal Title
CERAMICS INTERNATIONAL
Volume
42
Number
12
Start Page
14071
End Page
14076
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87732
DOI
10.1016/j.ceramint.2016.06.015
ISSN
0272-8842
Abstract
We modified the refractive index (n) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2/TiO2 (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 degrees C-annealed TiO2 films, the 600 degrees C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2/Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO2/Ag/600 degrees C-annealed TiO2 (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37-1.09 nm. The 600 degrees C-annealed multilayer yielded the highest Haacke's FOM of 193.9 x 10(-3) Omega(-1). (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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