Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films
- Authors
- Kim, Jae-Ho; Kim, Dae-Hyun; Kim, Sun-Kyung; Bae, Dukkyu; Yoo, Young-Zo; Seong, Tae-Yeon
- Issue Date
- 9월-2016
- Publisher
- ELSEVIER SCI LTD
- Keywords
- TiO2; Refractive index; Ag; Transparent conducting electrode
- Citation
- CERAMICS INTERNATIONAL, v.42, no.12, pp.14071 - 14076
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 42
- Number
- 12
- Start Page
- 14071
- End Page
- 14076
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/87732
- DOI
- 10.1016/j.ceramint.2016.06.015
- ISSN
- 0272-8842
- Abstract
- We modified the refractive index (n) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2/TiO2 (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 degrees C-annealed TiO2 films, the 600 degrees C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2/Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO2/Ag/600 degrees C-annealed TiO2 (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37-1.09 nm. The 600 degrees C-annealed multilayer yielded the highest Haacke's FOM of 193.9 x 10(-3) Omega(-1). (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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