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Practical approach to power integrity-driven design process for power-delivery networks

Authors
Ko, BaekseokKim, JoowonRyoo, JaeminHwang, ChulsoonKwon, Chan-KeunKim, Soo-Won
Issue Date
9월-2016
Publisher
INST ENGINEERING TECHNOLOGY-IET
Keywords
digital television; microprocessor chips; integrated circuit noise; system-on-chip; circuit optimisation; ball grid arrays; ceramic capacitors; integrated circuit modelling; RLC circuits; integrated circuit interconnections; network analysers; integrated circuit design; voltage 1; 2 V; voltage 1; 1 V; voltage noise ripple; voltage droop; multilayer ceramic capacitors; ball grid array ball interconnection; power integrity analysis; on-chip model; vector network analyser measurements; chip current profile; system-on-chip power net; RLC circuit; smart TV; application processors; CPU blocks; power noise problem; power-delivery networks; power integrity-driven design process
Citation
IET CIRCUITS DEVICES & SYSTEMS, v.10, no.5, pp.448 - 455
Indexed
SCIE
SCOPUS
Journal Title
IET CIRCUITS DEVICES & SYSTEMS
Volume
10
Number
5
Start Page
448
End Page
455
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87733
DOI
10.1049/iet-cds.2015.0285
ISSN
1751-858X
Abstract
The authors present a practical design process that considers the power noise problem in CPU blocks for application processors used in smart TVs. The target impedance is determined by modelling the RLC circuit of a system-on-chip power net. The target impedance of a power delivery network is then determined by applying the extracted chip current profile for finalising the design budget. The authors modelled the on-chip power net by combining vector network analyser measurements with an on-chip model for power integrity analysis. The authors demonstrated the optimisation and design strategy by using a ball grid array ball interconnection and case studies on the placement of multilayer ceramic capacitors. The simulation results showed good agreement with the measurement results. The error in the minimum value (negative direction) by voltage droop was less than 8.6%, while the difference in voltage noise ripple was 2.69% for a criterion of 1.1 V assuming a worst-case condition of 1.2 V.
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