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Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppression

Authors
Zang, Hwan-JunKim, Gwang-SikPark, Gil-JaeChoi, Yong-SooYu, Hyun-Yong
Issue Date
15-8월-2016
Publisher
OPTICAL SOC AMER
Citation
OPTICS LETTERS, v.41, no.16, pp.3686 - 3689
Indexed
SCIE
SCOPUS
Journal Title
OPTICS LETTERS
Volume
41
Number
16
Start Page
3686
End Page
3689
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87814
DOI
10.1364/OL.41.003686
ISSN
0146-9592
Abstract
In this study, we proposed germanium (Ge) metal-interlayer-semiconductor-metal (MISM) photodiodes (PD), with an anode of a metal-interlayer-semiconductor (MIS) contact and a cathode of a metal-semiconductor (MS) contact, to efficiently suppress the dark current of Ge PD. We selected titanium dioxide (TiO2) as an interlayer material for the MIS contact, due to its large valence band offset and negative conduction band offset to Ge. We significantly suppress the dark current of Ge PD by introducing the MISM structure with a TiO2 interlayer, as this enhances the hole Schottky barrier height, and thus acts as a large barrier for holes. In addition, it collects photo-generated carriers without degradation, due to its negative conduction band offset to Ge. This reduces the dark current of Ge MISM PDs by x8000 for 7-nm-thick TiO2 interlayer, while its photo current is still comparable to that of Ge metal-semiconductor-metal (MSM) PDs. Furthermore, the proposed Ge PD shows x6; 600 improvement of the normalized photo-to-dark-current ratio (NPDR) at a wavelength of 1.55 mu m. The proposed Ge MISM PD shows considerable promise for low power and high sensitivity Ge-based optoelectronic applications. (C) 2016 Optical Society of America
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공과대학 (전기전자공학부)
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