Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The Effect of Low-Temperature Annealing on a CdZnTe Detector
- Authors
- Kim, K. H.; Hwang, Seokjin; Fochuk, Petro; Nasi, L.; Zappettini, Andrea; Bolotnikov, A. E.; James, R. B.
- Issue Date
- 8월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- CdTeO3; CdZnTe; gamma-ray detector; low temperature annealing; seedless THM
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.63, no.4, pp.2278 - 2282
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 63
- Number
- 4
- Start Page
- 2278
- End Page
- 2282
- ISSN
- 0018-9499
- Abstract
- It is known that low temperature annealing at below 200 degrees C decreases the leakage current in a CdTe and CdZnTe (CZT) detector. However, only CZT detectors which have electrodes made by electroless method and low temperature annealing in the air showed diminished leakage current after annealing. With the aid of an in-situ annealing monitoring system, we measured the leakage current of a CZT detector while carrying out low-temperature annealing. A decrease in the leakage current resulted from the presence of thin insulating Te oxide layers, TeO2 and CdTeO3, instead of CZT/electrode interface enhancement by diffusion of Au. Other measurement results of Auger electron spectroscopy, micro TEM analysis, and pulse height spectrum were in good agreement with our new interpretation of the low temperature annealing effects of CZT.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.