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Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

Authors
Kim, TaewoongSeong, Tae-YeonKwon, Ohmyoung
Issue Date
6-6월-2016
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.108, no.23
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
108
Number
23
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/88359
DOI
10.1063/1.4953401
ISSN
0003-6951
Abstract
Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode ( LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density. Published by AIP Publishing.
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공과대학 (기계공학부)
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