Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Yoo, Gwangwe | - |
dc.contributor.author | Seo, Yujin | - |
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Cho, Karam | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T23:08:35Z | - |
dc.date.available | 2021-09-03T23:08:35Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/88393 | - |
dc.description.abstract | The effect of post-deposition H-2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity (rho(c)) of 3.4x10(-4) Omega . cm(2) was achieved on a moderately doped n-Ge substrate (1x10(17) cm(-3)), whereby 5900x reduction was exhibited from the Ti/n-Ge structure, and a 10x reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | RESISTIVITY | - |
dc.subject | INTERFACE | - |
dc.subject | PLASMA | - |
dc.subject | LEVEL | - |
dc.subject | PASSIVATION | - |
dc.subject | ARRAYS | - |
dc.subject | GE | - |
dc.title | Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2016.2558582 | - |
dc.identifier.scopusid | 2-s2.0-84971375780 | - |
dc.identifier.wosid | 000379934100005 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 37 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 709 | - |
dc.citation.endPage | 712 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | LEVEL | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Fermi-level unpinning | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | post-deposition hydrogen annealing | - |
dc.subject.keywordAuthor | source/drain | - |
dc.subject.keywordAuthor | titanium dioxide | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.