Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure
- Authors
- Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung Jin; Shin, Changhwan; Park, Jin-Hong; Yu, Hyun-Yong
- Issue Date
- 6월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Contact resistance; Fermi-level unpinning; germanium; post-deposition hydrogen annealing; source/drain; titanium dioxide
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 37
- Number
- 6
- Start Page
- 709
- End Page
- 712
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88393
- DOI
- 10.1109/LED.2016.2558582
- ISSN
- 0741-3106
- Abstract
- The effect of post-deposition H-2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity (rho(c)) of 3.4x10(-4) Omega . cm(2) was achieved on a moderately doped n-Ge substrate (1x10(17) cm(-3)), whereby 5900x reduction was exhibited from the Ti/n-Ge structure, and a 10x reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.
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