Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure
- Authors
- Shin, Changho; Kim, Jeong-Kyu; Shin, Changhwan; Kim, Jong-Kook; Yu, Hyun-Yong
- Issue Date
- 6월-2016
- Publisher
- ELSEVIER
- Keywords
- CMOS; FinFET; Metal-interlayer-semiconductor; Random dopant fluctuation; Variation
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.6, pp.618 - 622
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 6
- Start Page
- 618
- End Page
- 622
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88412
- DOI
- 10.1016/j.cap.2016.03.006
- ISSN
- 1567-1739
- Abstract
- The impact of random dopant fluctuation (RDF) on a 10-nm n-type silicon (Si) FinFET with a metal-insulator-semiconductor (M-I-S) source/drain (S/D) structure is investigated using three-dimensional TCAD simulation. To determine the optimal aspect ratio of the fin for a variation-robust FinFET with an M-I-S S/D structure, various metrics for device performance are quantitatively evaluated. It is found that variation in RDF-induced threshold voltage (V-th) in the FinFET can be suppressed with a taller fin (i.e., a fin with a higher aspect ratio) because of better gate-to-channel controllability and wider channel width. For a fin aspect ratio (i.e., fin height to fin width) of 5.25:1, the standard deviation for RDF-induced V-th in a FinFET with an S/D doping concentration (N-S/D) of 5 x 10(20) cm(-3) is 9.277 mV. In order to suppress RDF-induced V-th variation even further, an M-I-S structure with a heavily doped n-type ZnO interlayer can be introduced into the S/D region of the FinFET. For the tallest fin height, this M-I-S S/D structure (with an N-S/D = 5 x 10(19) cm(-3)) results in a standard deviation of 4.729 mV for RDF-induced V-th, while maintaining the on-state drive current (I-on) at a satisfactory level. Therefore, it is expected that a 10-nm n-type FinFET can be designed to be immune to Vth variation with the adoption of the proposed M-I-S S/D structure. (C) 2016 Elsevier B.V. All rights reserved.
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