Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Kim, Minsuk | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-04T00:22:39Z | - |
dc.date.available | 2021-09-04T00:22:39Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/88872 | - |
dc.description.abstract | In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of similar to 0.2 nW (or similar to 6.6 pW). The low-power inverting operation with a voltage gain of similar to 18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | GAAS NANOWIRES | - |
dc.subject | RIBBONS | - |
dc.subject | ELECTRONICS | - |
dc.subject | PHOTONICS | - |
dc.subject | MOSFETS | - |
dc.title | Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1007/s12274-016-1036-7 | - |
dc.identifier.scopusid | 2-s2.0-84961774656 | - |
dc.identifier.wosid | 000375624400017 | - |
dc.identifier.bibliographicCitation | NANO RESEARCH, v.9, no.5, pp.1409 - 1417 | - |
dc.relation.isPartOf | NANO RESEARCH | - |
dc.citation.title | NANO RESEARCH | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1409 | - |
dc.citation.endPage | 1417 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | GAAS NANOWIRES | - |
dc.subject.keywordPlus | RIBBONS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | PHOTONICS | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.subject.keywordAuthor | inverter | - |
dc.subject.keywordAuthor | low-power functionality | - |
dc.subject.keywordAuthor | bendable electronics | - |
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