Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics
- Authors
- Jeon, Youngin; Lee, Myeongwon; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig
- Issue Date
- 5월-2016
- Publisher
- TSINGHUA UNIV PRESS
- Keywords
- silicon nanowire; inverter; low-power functionality; bendable electronics
- Citation
- NANO RESEARCH, v.9, no.5, pp.1409 - 1417
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO RESEARCH
- Volume
- 9
- Number
- 5
- Start Page
- 1409
- End Page
- 1417
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88872
- DOI
- 10.1007/s12274-016-1036-7
- ISSN
- 1998-0124
- Abstract
- In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of similar to 0.2 nW (or similar to 6.6 pW). The low-power inverting operation with a voltage gain of similar to 18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.
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