Dislocation effects in FinFETs for different III-V compound semiconductors
- Authors
- Hur, Ji-Hyun; Jeon, Sanghun
- Issue Date
- 20-4월-2016
- Publisher
- IOP PUBLISHING LTD
- Keywords
- III-V compound semiconductor; MOSFET; dislocation; carrier scattering; mobility; FinFET
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 49
- Number
- 15
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88906
- DOI
- 10.1088/0022-3727/49/15/155101
- ISSN
- 0022-3727
- Abstract
- While Si-based devices are facing the limits of scaling, III-V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III-V compound semiconductors.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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