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Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect
- Authors
- Kim, Kwangeun; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 3-Feb-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- piezophototronics; piezoelectronics; ZnO; nanowire; trap-assisted electroluminescence; finite difference time domain; finite element method
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.4, pp.2764 - 2773
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 4
- Start Page
- 2764
- End Page
- 2773
- ISSN
- 1944-8244
- Abstract
- The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO2 layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron hole pairs thereby enhancing the efficiency of the trap-assisted green EL.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)