Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature
- Authors
- Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon
- Issue Date
- 1-2월-2016
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Al-doped ZnO; Ag; Transparent conducting electrode; Flexible device
- Citation
- CERAMICS INTERNATIONAL, v.42, no.2, pp.3473 - 3478
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 42
- Number
- 2
- Start Page
- 3473
- End Page
- 3478
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/89571
- DOI
- 10.1016/j.ceramint.2015.10.146
- ISSN
- 0272-8842
- Abstract
- We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84 x 10(21) to 9.66 x 10(21) cm(-3), while the sheet resistance decreased from 10.15 to 3.47 Omega sq(-1). The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9 x 10(-3) Omega(-1)). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/ Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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