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Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Authors
Kim, Jun HoKim, Da-SomKim, Sun-KyungYoo, Young-ZoLee, Jeong HwanKim, Sang-WooSeong, Tae-Yeon
Issue Date
1-2월-2016
Publisher
ELSEVIER SCI LTD
Keywords
Al-doped ZnO; Ag; Transparent conducting electrode; Flexible device
Citation
CERAMICS INTERNATIONAL, v.42, no.2, pp.3473 - 3478
Indexed
SCIE
SCOPUS
Journal Title
CERAMICS INTERNATIONAL
Volume
42
Number
2
Start Page
3473
End Page
3478
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/89571
DOI
10.1016/j.ceramint.2015.10.146
ISSN
0272-8842
Abstract
We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36 nm)/Ag/AZO (36 nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550 nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23 nm, the carrier concentration increased from 5.84 x 10(21) to 9.66 x 10(21) cm(-3), while the sheet resistance decreased from 10.15 to 3.47 Omega sq(-1). The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19 nm (43.9 x 10(-3) Omega(-1)). The resistance change for the 100 nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36 nm)/ Ag (19 nm)/AZO (36 nm) film remained constant up to 1000 cycles. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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SEONG, TAE YEON
공과대학 (신소재공학부)
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