Performance of InGaN/AlGaInN Near- UV LEDs With Ni/Ga2O3/Ag/Ga2O3 Electrode

Abstract

We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lighte-mitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 degrees C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 x 10(-3) Omega . cm(2). An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.