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Performance of InGaN/AlGaInN Near- UV LEDs With Ni/Ga2O3/Ag/Ga2O3 Electrode
- Authors
- Woo, Kie Young; Kim, Kyeong Heon; Kim, Tae Geun
- Issue Date
- 1-1월-2016
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gallium nitride; transparent conductive electrode; ultraviolet light-emitting diode
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.28, no.1, pp.67 - 70
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 28
- Number
- 1
- Start Page
- 67
- End Page
- 70
- ISSN
- 1041-1135
- Abstract
- We fabricated Ga2O3-based transparent conductive electrodes (TCEs) for use in near-ultraviolet (NUV) lighte-mitting diodes (LEDs) by embedding metal layers into Ga2O3. We employ Ni and Ag layers to improve current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 600 degrees C, 1 min) deposited on an NUV LED wafer exhibits 83% transmittance at 385 nm with a specific contact resistance of 8 x 10(-3) Omega . cm(2). An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light output power at 150 mA and a 3.2% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.
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