Electrical and Optical Damage to GaN-Based Light-Emitting Diodes by 20-MeV Proton Irradiation

Abstract

We report the effects of 20-MeV proton irradiation with various fluences (1 x 10(13) and 5 x 10(13) cm(-2)) on GaN-based blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.