Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes
- Authors
- Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin
- Issue Date
- 2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.8, no.19, pp.10273 - 10281
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 8
- Number
- 19
- Start Page
- 10273
- End Page
- 10281
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/90165
- DOI
- 10.1039/c6nr00505e
- ISSN
- 2040-3364
- Abstract
- The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable nonvolatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 degrees C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 10(4), a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.
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