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Memory Interfaces: Past, Present, and Future

Authors
Kim, C.Lee, H.-W.Song, J.
Issue Date
2016
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Solid-State Circuits Magazine, v.8, no.2, pp.23 - 34
Indexed
SCOPUS
Journal Title
IEEE Solid-State Circuits Magazine
Volume
8
Number
2
Start Page
23
End Page
34
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/91360
DOI
10.1109/MSSC.2016.2546659
ISSN
1943-0582
Abstract
Over the last few decades, the bandwidth of dynamic random-access memory (DRAM) has increased significantly through innovative architectures and circuit-level techniques to overcome the well-known memory wall problem. We can understand the past challenges of DRAM input/output (I/O) by investigating the technologies utilized for DRAM I/O in the transition from single-data-rate (SDR) synchronous DRAM (SDRAM)to double-data-rate (DDR) SDRAM. Recently developed versions of low-power DDR four (LPDDR4) and synchronous graphics DDR five (GDDR5) employ new I/O features for further bandwidth increase. Looking beyond LPDDR4 and GDDR5, what should be done to make another jump in bandwidth increase for DRAM? © 2016 IEEE.
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