Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Charge-trap flash memory using zirconium-nitride-based memristor switches
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hee-Dong | - |
| dc.contributor.author | Kim, Kyeong Heon | - |
| dc.contributor.author | An, Ho-Myoung | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-04T10:45:03Z | - |
| dc.date.available | 2021-09-04T10:45:03Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2015-11-11 | - |
| dc.identifier.issn | 0022-3727 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/91918 | - |
| dc.description.abstract | Charge-trap flash (CTF) memory using a zirconium nitride (ZrN)-based memristor switch (MRS) is demonstrated for next-generation nonvolatile memory. This device consists of a metal/MRS/nitride/oxide/silicon (M/MRS/N/O/S) structure so that electrical transport via the ZrN-based MRS layer can be utilized. Compared to previous oxide materials used as conduction paths, the proposed CTF device with a ZrN-based MRS exhibits a faster program/erase switching speed (20 ns/7 ns), along with comparable endurance and retention properties. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Charge-trap flash memory using zirconium-nitride-based memristor switches | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1088/0022-3727/48/44/445102 | - |
| dc.identifier.scopusid | 2-s2.0-84946061616 | - |
| dc.identifier.wosid | 000365925800014 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.44 | - |
| dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
| dc.citation.volume | 48 | - |
| dc.citation.number | 44 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | ZrN | - |
| dc.subject.keywordAuthor | ReCTF | - |
| dc.subject.keywordAuthor | memristor switch | - |
| dc.subject.keywordAuthor | blocking layer | - |
| dc.subject.keywordAuthor | filament | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.